shallowtrenchisolationoxidethicknessleakage

由 N Rezzak 著作 · 2010 · 被引用 8 次 — Prior to radiation exposure, the leakage current of the parasitic devices is low due to the relatively large effective gate oxide thickness (high threshold ...

由 VP Gopinath 著作 · 2001 · 被引用 3 次 — Shallow trench liner oxidation scheme is shown to have direct bearing on the reverse biased junction leakage. Experiments reducing liner oxide thickness and ...

由 E Perrin 著作 — This paper proposes a review of the various consequences of the Shallow Trench Isolation (STI) oxide thickness variations on different process steps and.

由 L Zhangli 著作 · 2011 · 被引用 5 次 — Gate length dependence of the shallow trench isolation leakage current in an ... STI was introduced and the trench oxide thickness is about 390 nm. The gate ...

STI (Shallow Trench Isolation) structures are fabricated such that leakage current is minimized through a field effect transistor fabricated between the STI ...

由 MS Kim 著作 · 2008 · 被引用 3 次 — We present an improved shallow trench isolation process to reduce leakage ... Exposed trench surface was then oxidized at 950 °C with 110 Å ...

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...

由 JW Sleight 著作 · 1999 · 被引用 39 次 — For the shallow trench isolation process employed, the leakage is most pronounced on SIMOX wafers when the buried oxide thickness is scaled down to 100 nm ...

由 J Ju 著作 · 2009 — The experiment results show that the STI stress level can be much reduced by decreasing STI oxide RTA temperature and liner ox thickness, hence leading to lower ...